From Wikipedia, the free encyclopedia.
The Insulated Gate Bipolar Transistor combines the simple gate drive characteristics of the MOSFET with the high current and low saturation voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
The IGBT is a recent invention.
It is mainly used in switching power supplies and motor control applications.
